HomeElectronics Multiple choice question MCQ online testVLSI online test mcq (part1) VLSI online test mcq (part1) Leave a Comment / Electronics Multiple choice question MCQ online test Spread the love 0% Created on July 23, 2023VLSI VLSI (part1) 1 / 50 1. The BiCMOS are preferred over CMOS due to . . . . . . . . a. High current drive capability b. All of the mentioned c. Switching speed is more compared to CMOS d. Sensitivity is less with respect to the load capacitance 2 / 50 2. In nMOS inverter configuration depletion mode device is called as . . . . . . . a. All of the mentioned b. Pull up c. None of the mentioned d. Pull down 3 / 50 3. What are the advantages of BiCMOS? a. High frequency characteristics b. All of the mentioned c. Higher gain d. Better noise characteristics 4 / 50 4. Substrate bias voltage is positive for nMOS. a. False b. True 5 / 50 5. If both the transistors are in saturation, then they act as . . . . . . . . a. Divider b. Buffer c. Voltage source d. Current source 6 / 50 6. In CMOS inverter, transistor is a switch having . . . . . . . . a. Infinite on resistance b. Finite off resistance c. Buffer d. Infinite off resistance 7 / 50 7. Speed power product is measured as the product of . . . . . . . . a. Gate switching delay and gate power absorption b. Gate switching delay and gate power dissipation c. Gate power dissipation and absorption d. Gate switching delay and net gate power 8 / 50 8. In CMOS fabrication, the photoresist layer is exposed to . . . . . . . . a. Visible light b. Ultraviolet light c. Infra red light d. Fluorescent 9 / 50 9. Which has better I/A? a. nMOS b. CMOS c. pMOS d. Bipolar 10 / 50 10. The . . . . . . . . is used to reduce the resistivity of poly silicon. a. Etching b. None of the mentioned c. Doping impurities d. Photo resist 11 / 50 11. The transistors used in BiCMOS are . . . . . . . . a. MOSFET b. Both BJT and MOSFETs c. BJT d. JFET 12 / 50 12. Substrate doping level should be decreased to avoid the latch-up effect. a. True b. False 13 / 50 13. Heavily doped polysilicon is deposited using . . . . . . a. Chemical vapour deposition b. Chemical vapour decomposition c. Chemical deposition d. Dry deposition 14 / 50 14. Surface mobility depends on . . . . . . . . a. Effective gate voltage b. Effective drain voltage c. Channel length d. Effective source voltage 15 / 50 15. BiCMOS inverter requires high load current sourcing a. True b. False 16 / 50 16. Ids depends on . . . . . . . a. Vds b. Vdd c. Vg d. Vss 17 / 50 17. What is the disadvantage of the MOS device? a. Limited current sourcing b. Limited voltage sinking c. Unlimited current sinking d. Limited voltage sourcing 18 / 50 18. Pass transistors are transistors used as . . . . . . . a. Inverter used in parallel b. Inverters used in series c. Switches connected in series d. Switches connected in parallel 19 / 50 19. Increasing fan-out . . . . . . . . the propagation delay. a. Decreases b. Does not affect c. Increases d. Exponentially decreases 20 / 50 20. The MOSFETS are arranged in this configuration to provide . . . . . . . . a. None of the mentioned b. Both zero static power dissipation and high input impedance c. Zero static power dissipation d. High Input impedance 21 / 50 21. For depletion mode transistor, gate should be connected to . . . . . . . . a. Positive voltage rail b. Ground c. Drain d. Source 22 / 50 22. What is the condition for non conducting mode? a. Vgs = Vds = Vs = 0 b. Vgs = Vds = 0 c. Vgs lesser than Vds d. Vds lesser than Vgs 23 / 50 23. CMOS technology is used in developing which of the following? a. All of the mentioned b. Microcontrollers c. Digital logic circuits d. Microprocessors 24 / 50 24. If the gate is given sufficiently large charge, electrons will be attracted to . . . . . . a. Drain region b. Switch region c. Channel region d. Bulk region 25 / 50 25. Fast gate can be built by keeping . . . . . . . . a. Input capacitance does not affect speed of the gate b. High on resistance c. Low output capacitance d. High output capacitance 26 / 50 26. In BiCMOS, MOS switches are used to . . . . . . a. To amplify the input voltage b. To perform logic functions c. Drive output loads d. Drive input loads 27 / 50 27. As die size shrinks, the complexity of making the photomasks . . . . . . . a. Increases b. Decreases c. Remains the same d. Cannot be determined 28 / 50 28. The current Ids . . . . . . . . as Vds increases. a. Remains fairly constant b. Increases c. Decreases d. Exponentially increases 29 / 50 29. The n-well collector is formed by . . . . . . . a. Lightly doped n-type epitaxial layer on p-Substrate b. Heavily doped n-type epitaxial layer on p-Substrate c. Heavily doped n-type diffused layer on p-Substrate d. Lightly doped n-type diffused layer on p-Substrate 30 / 50 30. Interconnection pattern is made on . . . . . . a. Metal layer b. Polysilicon layer c. Silicon-di-oxide layer d. Diffusion layer 31 / 50 31. If p-transistor is conducting and has small voltage between source and drain, then it is said to work in . .. . . a. Cut-off region b. Linear region c. Saturation region d. Non saturation resistive region 32 / 50 32. Transconductance gives the relationship between . . . . . . . a. Input current and input voltage b. Output current and output voltage c. Input current and output voltage d. Output current and input voltage 33 / 50 33. Latch-up is the generation of . . . . . . . a. Low impedance path b. Low resistance path c. High impedance path d. High resistance path 34 / 50 34. Increasing the transconductance . . . . . . a. Increases input capacitance b. Decrease in output capacitance c. Decreasing input capacitance d. Decreasing area occupied 35 / 50 35. The isolated active areas are created by technique known as . . . . . . a. Etched field-oxide isolation or Local Oxidation of Silicon b. Etched field-oxide isolation c. None of the mentioned d. Local Oxidation of Silicon 36 / 50 36. In latch-up condition, parasitic component gives rise to . . . . . . . . conducting path. a. High resistance b. High capacitance c. Low resistance d. Low capacitance 37 / 50 37. MOS transistor structure is . . . . . . a. Non symmetrical b. Semi symmetrical c. Symmetrical d. Pseudo symmetrical 38 / 50 38. Switching speed of a MOS device depends on . . . . . . a. Gate voltage above a threshold b. Length channel c. All of the mentioned d. Carrier mobility 39 / 50 39. Which of the following is true when inputs are controlled by equal amounts of charge? a. Cs(MOS) lesser than Cbase(bipolar) b. Cg(MOS) lesser than Cbase(bipolar) c. Cg(MOS) = Cbase(bipolar) d. Cg(MOS) greater than Cbase(bipolar) 40 / 50 40. N-well is formed by . . . . . . . . a. Diffusion b. Dispersion c. Decomposition d. Filtering 41 / 50 41. Positive photo resists are used more than negative photo resists because . . . . . . . . a. Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists b. Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists c. Negative photo resists are less sensitive to light d. Positive photo resists are less sensitive to light 42 / 50 42. Which process produces a circuit which is less prone to latch-up effect? a. pMOS b. nMOS c. CMOS d. BiCMOS 43 / 50 43. Increasing Vsb . . . . . . . . the threshold voltage. a. Exponentially increases b. Decreases c. Does not effect d. Increases 44 / 50 44. Depletion mode MOSFETs are more commonly used as . . . . . . . . a. Buffers b. Switches c. Resistors d. Capacitors 45 / 50 45. In nMOS fabrication, etching is done using . . . . . . . . . a. Sodium chloride b. Plasma c. Hydrochloric acid d. Sulphuric acid 46 / 50 46. What are the advantages of E-beam masks? a. Looser layer b. Larger feature size c. Small feature size d. Complex design 47 / 50 47. Which is used for the interconnection? a. Silicon b. Boron c. Aluminium d. Oxygen 48 / 50 48. The dopants are introduced in the active areas of silicon by using which process? a. Diffusion process b. Chemical Vapour Deposition c. Either Diffusion or Ion Implantation Process d. Ion Implantation process 49 / 50 49. Contact cuts are made in . . . . . . . . . a. Source b. Drain c. Diffusion layer d. Metal layer 50 / 50 50. Surface mobility depends on . . a. Effective source voltage b. Effective gate voltage c. Effective drain voltage d. Channel length Your score is LinkedIn Facebook VKontakte 0% Restart quiz Exit Anonymous feedback Thank you Send feedback Spread the love
