HomeElectronics Multiple choice question MCQ online testVLSI online test mcq (part1) VLSI online test mcq (part1) Leave a Comment / Electronics Multiple choice question MCQ online test Spread the love 0% Created on July 23, 2023VLSI VLSI (part1) 1 / 50 1. The BiCMOS are preferred over CMOS due to . . . . . . . . a. All of the mentioned b. Switching speed is more compared to CMOS c. High current drive capability d. Sensitivity is less with respect to the load capacitance 2 / 50 2. In nMOS inverter configuration depletion mode device is called as . . . . . . . a. None of the mentioned b. All of the mentioned c. Pull up d. Pull down 3 / 50 3. What are the advantages of BiCMOS? a. High frequency characteristics b. All of the mentioned c. Higher gain d. Better noise characteristics 4 / 50 4. Substrate bias voltage is positive for nMOS. a. False b. True 5 / 50 5. If both the transistors are in saturation, then they act as . . . . . . . . a. Current source b. Buffer c. Divider d. Voltage source 6 / 50 6. In CMOS inverter, transistor is a switch having . . . . . . . . a. Infinite off resistance b. Finite off resistance c. Infinite on resistance d. Buffer 7 / 50 7. Speed power product is measured as the product of . . . . . . . . a. Gate switching delay and net gate power b. Gate switching delay and gate power absorption c. Gate switching delay and gate power dissipation d. Gate power dissipation and absorption 8 / 50 8. In CMOS fabrication, the photoresist layer is exposed to . . . . . . . . a. Infra red light b. Fluorescent c. Visible light d. Ultraviolet light 9 / 50 9. Which has better I/A? a. pMOS b. CMOS c. Bipolar d. nMOS 10 / 50 10. The . . . . . . . . is used to reduce the resistivity of poly silicon. a. Photo resist b. Doping impurities c. Etching d. None of the mentioned 11 / 50 11. The transistors used in BiCMOS are . . . . . . . . a. MOSFET b. Both BJT and MOSFETs c. BJT d. JFET 12 / 50 12. Substrate doping level should be decreased to avoid the latch-up effect. a. True b. False 13 / 50 13. Heavily doped polysilicon is deposited using . . . . . . a. Chemical vapour decomposition b. Chemical vapour deposition c. Dry deposition d. Chemical deposition 14 / 50 14. Surface mobility depends on . . . . . . . . a. Effective drain voltage b. Effective gate voltage c. Effective source voltage d. Channel length 15 / 50 15. BiCMOS inverter requires high load current sourcing a. True b. False 16 / 50 16. Ids depends on . . . . . . . a. Vg b. Vds c. Vdd d. Vss 17 / 50 17. What is the disadvantage of the MOS device? a. Limited current sourcing b. Limited voltage sourcing c. Unlimited current sinking d. Limited voltage sinking 18 / 50 18. Pass transistors are transistors used as . . . . . . . a. Inverter used in parallel b. Switches connected in series c. Inverters used in series d. Switches connected in parallel 19 / 50 19. Increasing fan-out . . . . . . . . the propagation delay. a. Exponentially decreases b. Increases c. Decreases d. Does not affect 20 / 50 20. The MOSFETS are arranged in this configuration to provide . . . . . . . . a. Both zero static power dissipation and high input impedance b. Zero static power dissipation c. High Input impedance d. None of the mentioned 21 / 50 21. For depletion mode transistor, gate should be connected to . . . . . . . . a. Ground b. Drain c. Positive voltage rail d. Source 22 / 50 22. What is the condition for non conducting mode? a. Vgs = Vds = 0 b. Vgs = Vds = Vs = 0 c. Vgs lesser than Vds d. Vds lesser than Vgs 23 / 50 23. CMOS technology is used in developing which of the following? a. Microcontrollers b. Digital logic circuits c. Microprocessors d. All of the mentioned 24 / 50 24. If the gate is given sufficiently large charge, electrons will be attracted to . . . . . . a. Channel region b. Bulk region c. Switch region d. Drain region 25 / 50 25. Fast gate can be built by keeping . . . . . . . . a. High output capacitance b. Low output capacitance c. Input capacitance does not affect speed of the gate d. High on resistance 26 / 50 26. In BiCMOS, MOS switches are used to . . . . . . a. To amplify the input voltage b. To perform logic functions c. Drive output loads d. Drive input loads 27 / 50 27. As die size shrinks, the complexity of making the photomasks . . . . . . . a. Decreases b. Cannot be determined c. Remains the same d. Increases 28 / 50 28. The current Ids . . . . . . . . as Vds increases. a. Increases b. Decreases c. Remains fairly constant d. Exponentially increases 29 / 50 29. The n-well collector is formed by . . . . . . . a. Lightly doped n-type epitaxial layer on p-Substrate b. Lightly doped n-type diffused layer on p-Substrate c. Heavily doped n-type diffused layer on p-Substrate d. Heavily doped n-type epitaxial layer on p-Substrate 30 / 50 30. Interconnection pattern is made on . . . . . . a. Silicon-di-oxide layer b. Polysilicon layer c. Diffusion layer d. Metal layer 31 / 50 31. If p-transistor is conducting and has small voltage between source and drain, then it is said to work in . .. . . a. Saturation region b. Cut-off region c. Linear region d. Non saturation resistive region 32 / 50 32. Transconductance gives the relationship between . . . . . . . a. Output current and output voltage b. Output current and input voltage c. Input current and output voltage d. Input current and input voltage 33 / 50 33. Latch-up is the generation of . . . . . . . a. Low resistance path b. Low impedance path c. High resistance path d. High impedance path 34 / 50 34. Increasing the transconductance . . . . . . a. Decreasing input capacitance b. Increases input capacitance c. Decrease in output capacitance d. Decreasing area occupied 35 / 50 35. The isolated active areas are created by technique known as . . . . . . a. Etched field-oxide isolation or Local Oxidation of Silicon b. Etched field-oxide isolation c. Local Oxidation of Silicon d. None of the mentioned 36 / 50 36. In latch-up condition, parasitic component gives rise to . . . . . . . . conducting path. a. Low capacitance b. High resistance c. Low resistance d. High capacitance 37 / 50 37. MOS transistor structure is . . . . . . a. Symmetrical b. Pseudo symmetrical c. Semi symmetrical d. Non symmetrical 38 / 50 38. Switching speed of a MOS device depends on . . . . . . a. All of the mentioned b. Gate voltage above a threshold c. Length channel d. Carrier mobility 39 / 50 39. Which of the following is true when inputs are controlled by equal amounts of charge? a. Cg(MOS) = Cbase(bipolar) b. Cg(MOS) lesser than Cbase(bipolar) c. Cs(MOS) lesser than Cbase(bipolar) d. Cg(MOS) greater than Cbase(bipolar) 40 / 50 40. N-well is formed by . . . . . . . . a. Filtering b. Decomposition c. Diffusion d. Dispersion 41 / 50 41. Positive photo resists are used more than negative photo resists because . . . . . . . . a. Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists b. Negative photo resists are less sensitive to light c. Positive photo resists are less sensitive to light d. Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists 42 / 50 42. Which process produces a circuit which is less prone to latch-up effect? a. CMOS b. BiCMOS c. pMOS d. nMOS 43 / 50 43. Increasing Vsb . . . . . . . . the threshold voltage. a. Increases b. Decreases c. Does not effect d. Exponentially increases 44 / 50 44. Depletion mode MOSFETs are more commonly used as . . . . . . . . a. Capacitors b. Switches c. Resistors d. Buffers 45 / 50 45. In nMOS fabrication, etching is done using . . . . . . . . . a. Hydrochloric acid b. Sodium chloride c. Sulphuric acid d. Plasma 46 / 50 46. What are the advantages of E-beam masks? a. Small feature size b. Looser layer c. Complex design d. Larger feature size 47 / 50 47. Which is used for the interconnection? a. Aluminium b. Oxygen c. Silicon d. Boron 48 / 50 48. The dopants are introduced in the active areas of silicon by using which process? a. Diffusion process b. Chemical Vapour Deposition c. Either Diffusion or Ion Implantation Process d. Ion Implantation process 49 / 50 49. Contact cuts are made in . . . . . . . . . a. Drain b. Source c. Metal layer d. Diffusion layer 50 / 50 50. Surface mobility depends on . . a. Effective gate voltage b. Effective source voltage c. Channel length d. Effective drain voltage Your score is LinkedIn Facebook VKontakte 0% Restart quiz Exit Anonymous feedback Thank you Send feedback Spread the love
