HomeElectronics Multiple choice question MCQ online testVLSI online test mcq (part1) VLSI online test mcq (part1) Leave a Comment / Electronics Multiple choice question MCQ online test Share this 0% Created on July 23, 2023VLSI VLSI (part1) 1 / 50 1. The BiCMOS are preferred over CMOS due to . . . . . . . . a. Sensitivity is less with respect to the load capacitance b. All of the mentioned c. Switching speed is more compared to CMOS d. High current drive capability 2 / 50 2. In nMOS inverter configuration depletion mode device is called as . . . . . . . a. All of the mentioned b. Pull up c. Pull down d. None of the mentioned 3 / 50 3. What are the advantages of BiCMOS? a. Better noise characteristics b. Higher gain c. All of the mentioned d. High frequency characteristics 4 / 50 4. Substrate bias voltage is positive for nMOS. a. True b. False 5 / 50 5. If both the transistors are in saturation, then they act as . . . . . . . . a. Voltage source b. Divider c. Buffer d. Current source 6 / 50 6. In CMOS inverter, transistor is a switch having . . . . . . . . a. Buffer b. Infinite off resistance c. Finite off resistance d. Infinite on resistance 7 / 50 7. Speed power product is measured as the product of . . . . . . . . a. Gate switching delay and gate power dissipation b. Gate power dissipation and absorption c. Gate switching delay and gate power absorption d. Gate switching delay and net gate power 8 / 50 8. In CMOS fabrication, the photoresist layer is exposed to . . . . . . . . a. Fluorescent b. Infra red light c. Ultraviolet light d. Visible light 9 / 50 9. Which has better I/A? a. nMOS b. pMOS c. Bipolar d. CMOS 10 / 50 10. The . . . . . . . . is used to reduce the resistivity of poly silicon. a. None of the mentioned b. Photo resist c. Etching d. Doping impurities 11 / 50 11. The transistors used in BiCMOS are . . . . . . . . a. BJT b. Both BJT and MOSFETs c. JFET d. MOSFET 12 / 50 12. Substrate doping level should be decreased to avoid the latch-up effect. a. False b. True 13 / 50 13. Heavily doped polysilicon is deposited using . . . . . . a. Chemical vapour deposition b. Dry deposition c. Chemical vapour decomposition d. Chemical deposition 14 / 50 14. Surface mobility depends on . . . . . . . . a. Effective drain voltage b. Effective source voltage c. Channel length d. Effective gate voltage 15 / 50 15. BiCMOS inverter requires high load current sourcing a. False b. True 16 / 50 16. Ids depends on . . . . . . . a. Vss b. Vg c. Vdd d. Vds 17 / 50 17. What is the disadvantage of the MOS device? a. Limited current sourcing b. Limited voltage sinking c. Limited voltage sourcing d. Unlimited current sinking 18 / 50 18. Pass transistors are transistors used as . . . . . . . a. Switches connected in series b. Switches connected in parallel c. Inverters used in series d. Inverter used in parallel 19 / 50 19. Increasing fan-out . . . . . . . . the propagation delay. a. Does not affect b. Exponentially decreases c. Decreases d. Increases 20 / 50 20. The MOSFETS are arranged in this configuration to provide . . . . . . . . a. Zero static power dissipation b. High Input impedance c. Both zero static power dissipation and high input impedance d. None of the mentioned 21 / 50 21. For depletion mode transistor, gate should be connected to . . . . . . . . a. Drain b. Ground c. Positive voltage rail d. Source 22 / 50 22. What is the condition for non conducting mode? a. Vgs lesser than Vds b. Vgs = Vds = 0 c. Vgs = Vds = Vs = 0 d. Vds lesser than Vgs 23 / 50 23. CMOS technology is used in developing which of the following? a. Microcontrollers b. Digital logic circuits c. Microprocessors d. All of the mentioned 24 / 50 24. If the gate is given sufficiently large charge, electrons will be attracted to . . . . . . a. Drain region b. Switch region c. Channel region d. Bulk region 25 / 50 25. Fast gate can be built by keeping . . . . . . . . a. High on resistance b. Input capacitance does not affect speed of the gate c. High output capacitance d. Low output capacitance 26 / 50 26. In BiCMOS, MOS switches are used to . . . . . . a. To perform logic functions b. Drive input loads c. To amplify the input voltage d. Drive output loads 27 / 50 27. As die size shrinks, the complexity of making the photomasks . . . . . . . a. Increases b. Decreases c. Remains the same d. Cannot be determined 28 / 50 28. The current Ids . . . . . . . . as Vds increases. a. Remains fairly constant b. Decreases c. Increases d. Exponentially increases 29 / 50 29. The n-well collector is formed by . . . . . . . a. Heavily doped n-type epitaxial layer on p-Substrate b. Lightly doped n-type epitaxial layer on p-Substrate c. Lightly doped n-type diffused layer on p-Substrate d. Heavily doped n-type diffused layer on p-Substrate 30 / 50 30. Interconnection pattern is made on . . . . . . a. Diffusion layer b. Metal layer c. Silicon-di-oxide layer d. Polysilicon layer 31 / 50 31. If p-transistor is conducting and has small voltage between source and drain, then it is said to work in . .. . . a. Saturation region b. Cut-off region c. Linear region d. Non saturation resistive region 32 / 50 32. Transconductance gives the relationship between . . . . . . . a. Output current and input voltage b. Input current and input voltage c. Output current and output voltage d. Input current and output voltage 33 / 50 33. Latch-up is the generation of . . . . . . . a. High impedance path b. High resistance path c. Low impedance path d. Low resistance path 34 / 50 34. Increasing the transconductance . . . . . . a. Increases input capacitance b. Decreasing input capacitance c. Decrease in output capacitance d. Decreasing area occupied 35 / 50 35. The isolated active areas are created by technique known as . . . . . . a. Etched field-oxide isolation or Local Oxidation of Silicon b. Local Oxidation of Silicon c. Etched field-oxide isolation d. None of the mentioned 36 / 50 36. In latch-up condition, parasitic component gives rise to . . . . . . . . conducting path. a. High resistance b. Low resistance c. High capacitance d. Low capacitance 37 / 50 37. MOS transistor structure is . . . . . . a. Symmetrical b. Non symmetrical c. Pseudo symmetrical d. Semi symmetrical 38 / 50 38. Switching speed of a MOS device depends on . . . . . . a. Carrier mobility b. Gate voltage above a threshold c. Length channel d. All of the mentioned 39 / 50 39. Which of the following is true when inputs are controlled by equal amounts of charge? a. Cg(MOS) lesser than Cbase(bipolar) b. Cg(MOS) = Cbase(bipolar) c. Cs(MOS) lesser than Cbase(bipolar) d. Cg(MOS) greater than Cbase(bipolar) 40 / 50 40. N-well is formed by . . . . . . . . a. Dispersion b. Filtering c. Decomposition d. Diffusion 41 / 50 41. Positive photo resists are used more than negative photo resists because . . . . . . . . a. Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists b. Positive photo resists are less sensitive to light c. Negative photo resists are less sensitive to light d. Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists 42 / 50 42. Which process produces a circuit which is less prone to latch-up effect? a. pMOS b. BiCMOS c. CMOS d. nMOS 43 / 50 43. Increasing Vsb . . . . . . . . the threshold voltage. a. Decreases b. Does not effect c. Exponentially increases d. Increases 44 / 50 44. Depletion mode MOSFETs are more commonly used as . . . . . . . . a. Capacitors b. Switches c. Resistors d. Buffers 45 / 50 45. In nMOS fabrication, etching is done using . . . . . . . . . a. Sodium chloride b. Plasma c. Sulphuric acid d. Hydrochloric acid 46 / 50 46. What are the advantages of E-beam masks? a. Small feature size b. Looser layer c. Larger feature size d. Complex design 47 / 50 47. Which is used for the interconnection? a. Silicon b. Oxygen c. Boron d. Aluminium 48 / 50 48. The dopants are introduced in the active areas of silicon by using which process? a. Diffusion process b. Ion Implantation process c. Chemical Vapour Deposition d. Either Diffusion or Ion Implantation Process 49 / 50 49. Contact cuts are made in . . . . . . . . . a. Metal layer b. Diffusion layer c. Drain d. Source 50 / 50 50. Surface mobility depends on . . a. Effective source voltage b. Effective drain voltage c. Effective gate voltage d. Channel length Your score is LinkedIn Facebook Twitter VKontakte 0% Restart quiz Exit Anonymous feedback Thank you Send feedback Share this