HomeElectronics Multiple choice question MCQ online testVLSI online test mcq (part1) VLSI online test mcq (part1) Leave a Comment / Electronics Multiple choice question MCQ online test Spread the love 0% Created on July 23, 2023VLSI VLSI (part1) 1 / 50 1. The BiCMOS are preferred over CMOS due to . . . . . . . . a. High current drive capability b. All of the mentioned c. Sensitivity is less with respect to the load capacitance d. Switching speed is more compared to CMOS 2 / 50 2. In nMOS inverter configuration depletion mode device is called as . . . . . . . a. None of the mentioned b. All of the mentioned c. Pull up d. Pull down 3 / 50 3. What are the advantages of BiCMOS? a. Better noise characteristics b. High frequency characteristics c. All of the mentioned d. Higher gain 4 / 50 4. Substrate bias voltage is positive for nMOS. a. True b. False 5 / 50 5. If both the transistors are in saturation, then they act as . . . . . . . . a. Current source b. Buffer c. Divider d. Voltage source 6 / 50 6. In CMOS inverter, transistor is a switch having . . . . . . . . a. Buffer b. Finite off resistance c. Infinite off resistance d. Infinite on resistance 7 / 50 7. Speed power product is measured as the product of . . . . . . . . a. Gate switching delay and gate power dissipation b. Gate switching delay and gate power absorption c. Gate power dissipation and absorption d. Gate switching delay and net gate power 8 / 50 8. In CMOS fabrication, the photoresist layer is exposed to . . . . . . . . a. Infra red light b. Fluorescent c. Visible light d. Ultraviolet light 9 / 50 9. Which has better I/A? a. nMOS b. pMOS c. CMOS d. Bipolar 10 / 50 10. The . . . . . . . . is used to reduce the resistivity of poly silicon. a. Photo resist b. Etching c. None of the mentioned d. Doping impurities 11 / 50 11. The transistors used in BiCMOS are . . . . . . . . a. JFET b. Both BJT and MOSFETs c. MOSFET d. BJT 12 / 50 12. Substrate doping level should be decreased to avoid the latch-up effect. a. False b. True 13 / 50 13. Heavily doped polysilicon is deposited using . . . . . . a. Chemical vapour deposition b. Chemical deposition c. Dry deposition d. Chemical vapour decomposition 14 / 50 14. Surface mobility depends on . . . . . . . . a. Effective drain voltage b. Channel length c. Effective source voltage d. Effective gate voltage 15 / 50 15. BiCMOS inverter requires high load current sourcing a. False b. True 16 / 50 16. Ids depends on . . . . . . . a. Vss b. Vdd c. Vg d. Vds 17 / 50 17. What is the disadvantage of the MOS device? a. Limited current sourcing b. Unlimited current sinking c. Limited voltage sourcing d. Limited voltage sinking 18 / 50 18. Pass transistors are transistors used as . . . . . . . a. Inverter used in parallel b. Switches connected in parallel c. Switches connected in series d. Inverters used in series 19 / 50 19. Increasing fan-out . . . . . . . . the propagation delay. a. Exponentially decreases b. Does not affect c. Decreases d. Increases 20 / 50 20. The MOSFETS are arranged in this configuration to provide . . . . . . . . a. None of the mentioned b. High Input impedance c. Both zero static power dissipation and high input impedance d. Zero static power dissipation 21 / 50 21. For depletion mode transistor, gate should be connected to . . . . . . . . a. Source b. Drain c. Ground d. Positive voltage rail 22 / 50 22. What is the condition for non conducting mode? a. Vds lesser than Vgs b. Vgs lesser than Vds c. Vgs = Vds = 0 d. Vgs = Vds = Vs = 0 23 / 50 23. CMOS technology is used in developing which of the following? a. Microprocessors b. Microcontrollers c. All of the mentioned d. Digital logic circuits 24 / 50 24. If the gate is given sufficiently large charge, electrons will be attracted to . . . . . . a. Drain region b. Channel region c. Switch region d. Bulk region 25 / 50 25. Fast gate can be built by keeping . . . . . . . . a. Input capacitance does not affect speed of the gate b. Low output capacitance c. High output capacitance d. High on resistance 26 / 50 26. In BiCMOS, MOS switches are used to . . . . . . a. To amplify the input voltage b. To perform logic functions c. Drive output loads d. Drive input loads 27 / 50 27. As die size shrinks, the complexity of making the photomasks . . . . . . . a. Cannot be determined b. Remains the same c. Increases d. Decreases 28 / 50 28. The current Ids . . . . . . . . as Vds increases. a. Remains fairly constant b. Decreases c. Increases d. Exponentially increases 29 / 50 29. The n-well collector is formed by . . . . . . . a. Lightly doped n-type diffused layer on p-Substrate b. Lightly doped n-type epitaxial layer on p-Substrate c. Heavily doped n-type diffused layer on p-Substrate d. Heavily doped n-type epitaxial layer on p-Substrate 30 / 50 30. Interconnection pattern is made on . . . . . . a. Metal layer b. Silicon-di-oxide layer c. Polysilicon layer d. Diffusion layer 31 / 50 31. If p-transistor is conducting and has small voltage between source and drain, then it is said to work in . .. . . a. Linear region b. Non saturation resistive region c. Cut-off region d. Saturation region 32 / 50 32. Transconductance gives the relationship between . . . . . . . a. Output current and output voltage b. Input current and input voltage c. Output current and input voltage d. Input current and output voltage 33 / 50 33. Latch-up is the generation of . . . . . . . a. High resistance path b. High impedance path c. Low impedance path d. Low resistance path 34 / 50 34. Increasing the transconductance . . . . . . a. Increases input capacitance b. Decrease in output capacitance c. Decreasing input capacitance d. Decreasing area occupied 35 / 50 35. The isolated active areas are created by technique known as . . . . . . a. Etched field-oxide isolation or Local Oxidation of Silicon b. Etched field-oxide isolation c. Local Oxidation of Silicon d. None of the mentioned 36 / 50 36. In latch-up condition, parasitic component gives rise to . . . . . . . . conducting path. a. High capacitance b. Low resistance c. High resistance d. Low capacitance 37 / 50 37. MOS transistor structure is . . . . . . a. Non symmetrical b. Symmetrical c. Semi symmetrical d. Pseudo symmetrical 38 / 50 38. Switching speed of a MOS device depends on . . . . . . a. Length channel b. All of the mentioned c. Carrier mobility d. Gate voltage above a threshold 39 / 50 39. Which of the following is true when inputs are controlled by equal amounts of charge? a. Cs(MOS) lesser than Cbase(bipolar) b. Cg(MOS) lesser than Cbase(bipolar) c. Cg(MOS) = Cbase(bipolar) d. Cg(MOS) greater than Cbase(bipolar) 40 / 50 40. N-well is formed by . . . . . . . . a. Filtering b. Decomposition c. Dispersion d. Diffusion 41 / 50 41. Positive photo resists are used more than negative photo resists because . . . . . . . . a. Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists b. Negative photo resists are less sensitive to light c. Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists d. Positive photo resists are less sensitive to light 42 / 50 42. Which process produces a circuit which is less prone to latch-up effect? a. BiCMOS b. nMOS c. pMOS d. CMOS 43 / 50 43. Increasing Vsb . . . . . . . . the threshold voltage. a. Increases b. Exponentially increases c. Does not effect d. Decreases 44 / 50 44. Depletion mode MOSFETs are more commonly used as . . . . . . . . a. Capacitors b. Switches c. Resistors d. Buffers 45 / 50 45. In nMOS fabrication, etching is done using . . . . . . . . . a. Plasma b. Sulphuric acid c. Sodium chloride d. Hydrochloric acid 46 / 50 46. What are the advantages of E-beam masks? a. Complex design b. Small feature size c. Looser layer d. Larger feature size 47 / 50 47. Which is used for the interconnection? a. Silicon b. Boron c. Aluminium d. Oxygen 48 / 50 48. The dopants are introduced in the active areas of silicon by using which process? a. Chemical Vapour Deposition b. Diffusion process c. Ion Implantation process d. Either Diffusion or Ion Implantation Process 49 / 50 49. Contact cuts are made in . . . . . . . . . a. Drain b. Metal layer c. Source d. Diffusion layer 50 / 50 50. Surface mobility depends on . . a. Effective drain voltage b. Effective source voltage c. Effective gate voltage d. Channel length Your score is LinkedIn Facebook VKontakte 0% Restart quiz Exit Anonymous feedback Thank you Send feedback Spread the love