HomeElectronics Multiple choice question MCQ online testVLSI online test mcq (part1) VLSI online test mcq (part1) Leave a Comment / Electronics Multiple choice question MCQ online test Share this 0% Created on July 23, 2023VLSI VLSI (part1) 1 / 50 1. The BiCMOS are preferred over CMOS due to . . . . . . . . a. Switching speed is more compared to CMOS b. Sensitivity is less with respect to the load capacitance c. All of the mentioned d. High current drive capability 2 / 50 2. In nMOS inverter configuration depletion mode device is called as . . . . . . . a. None of the mentioned b. Pull up c. All of the mentioned d. Pull down 3 / 50 3. What are the advantages of BiCMOS? a. High frequency characteristics b. All of the mentioned c. Better noise characteristics d. Higher gain 4 / 50 4. Substrate bias voltage is positive for nMOS. a. True b. False 5 / 50 5. If both the transistors are in saturation, then they act as . . . . . . . . a. Buffer b. Divider c. Current source d. Voltage source 6 / 50 6. In CMOS inverter, transistor is a switch having . . . . . . . . a. Infinite off resistance b. Finite off resistance c. Buffer d. Infinite on resistance 7 / 50 7. Speed power product is measured as the product of . . . . . . . . a. Gate switching delay and gate power absorption b. Gate switching delay and net gate power c. Gate switching delay and gate power dissipation d. Gate power dissipation and absorption 8 / 50 8. In CMOS fabrication, the photoresist layer is exposed to . . . . . . . . a. Visible light b. Fluorescent c. Infra red light d. Ultraviolet light 9 / 50 9. Which has better I/A? a. Bipolar b. CMOS c. nMOS d. pMOS 10 / 50 10. The . . . . . . . . is used to reduce the resistivity of poly silicon. a. Photo resist b. Etching c. None of the mentioned d. Doping impurities 11 / 50 11. The transistors used in BiCMOS are . . . . . . . . a. BJT b. MOSFET c. Both BJT and MOSFETs d. JFET 12 / 50 12. Substrate doping level should be decreased to avoid the latch-up effect. a. False b. True 13 / 50 13. Heavily doped polysilicon is deposited using . . . . . . a. Dry deposition b. Chemical vapour decomposition c. Chemical vapour deposition d. Chemical deposition 14 / 50 14. Surface mobility depends on . . . . . . . . a. Effective drain voltage b. Effective gate voltage c. Channel length d. Effective source voltage 15 / 50 15. BiCMOS inverter requires high load current sourcing a. False b. True 16 / 50 16. Ids depends on . . . . . . . a. Vg b. Vdd c. Vds d. Vss 17 / 50 17. What is the disadvantage of the MOS device? a. Unlimited current sinking b. Limited current sourcing c. Limited voltage sinking d. Limited voltage sourcing 18 / 50 18. Pass transistors are transistors used as . . . . . . . a. Inverter used in parallel b. Switches connected in parallel c. Switches connected in series d. Inverters used in series 19 / 50 19. Increasing fan-out . . . . . . . . the propagation delay. a. Increases b. Does not affect c. Exponentially decreases d. Decreases 20 / 50 20. The MOSFETS are arranged in this configuration to provide . . . . . . . . a. Both zero static power dissipation and high input impedance b. Zero static power dissipation c. None of the mentioned d. High Input impedance 21 / 50 21. For depletion mode transistor, gate should be connected to . . . . . . . . a. Source b. Positive voltage rail c. Ground d. Drain 22 / 50 22. What is the condition for non conducting mode? a. Vds lesser than Vgs b. Vgs = Vds = Vs = 0 c. Vgs lesser than Vds d. Vgs = Vds = 0 23 / 50 23. CMOS technology is used in developing which of the following? a. Microprocessors b. Digital logic circuits c. Microcontrollers d. All of the mentioned 24 / 50 24. If the gate is given sufficiently large charge, electrons will be attracted to . . . . . . a. Switch region b. Bulk region c. Channel region d. Drain region 25 / 50 25. Fast gate can be built by keeping . . . . . . . . a. High on resistance b. Input capacitance does not affect speed of the gate c. Low output capacitance d. High output capacitance 26 / 50 26. In BiCMOS, MOS switches are used to . . . . . . a. To perform logic functions b. Drive input loads c. To amplify the input voltage d. Drive output loads 27 / 50 27. As die size shrinks, the complexity of making the photomasks . . . . . . . a. Increases b. Cannot be determined c. Decreases d. Remains the same 28 / 50 28. The current Ids . . . . . . . . as Vds increases. a. Decreases b. Increases c. Exponentially increases d. Remains fairly constant 29 / 50 29. The n-well collector is formed by . . . . . . . a. Heavily doped n-type epitaxial layer on p-Substrate b. Heavily doped n-type diffused layer on p-Substrate c. Lightly doped n-type epitaxial layer on p-Substrate d. Lightly doped n-type diffused layer on p-Substrate 30 / 50 30. Interconnection pattern is made on . . . . . . a. Polysilicon layer b. Metal layer c. Diffusion layer d. Silicon-di-oxide layer 31 / 50 31. If p-transistor is conducting and has small voltage between source and drain, then it is said to work in . .. . . a. Saturation region b. Linear region c. Non saturation resistive region d. Cut-off region 32 / 50 32. Transconductance gives the relationship between . . . . . . . a. Output current and output voltage b. Input current and input voltage c. Input current and output voltage d. Output current and input voltage 33 / 50 33. Latch-up is the generation of . . . . . . . a. Low impedance path b. Low resistance path c. High resistance path d. High impedance path 34 / 50 34. Increasing the transconductance . . . . . . a. Decreasing input capacitance b. Increases input capacitance c. Decrease in output capacitance d. Decreasing area occupied 35 / 50 35. The isolated active areas are created by technique known as . . . . . . a. Etched field-oxide isolation b. Local Oxidation of Silicon c. None of the mentioned d. Etched field-oxide isolation or Local Oxidation of Silicon 36 / 50 36. In latch-up condition, parasitic component gives rise to . . . . . . . . conducting path. a. High resistance b. High capacitance c. Low resistance d. Low capacitance 37 / 50 37. MOS transistor structure is . . . . . . a. Semi symmetrical b. Non symmetrical c. Pseudo symmetrical d. Symmetrical 38 / 50 38. Switching speed of a MOS device depends on . . . . . . a. Length channel b. Carrier mobility c. Gate voltage above a threshold d. All of the mentioned 39 / 50 39. Which of the following is true when inputs are controlled by equal amounts of charge? a. Cg(MOS) = Cbase(bipolar) b. Cg(MOS) greater than Cbase(bipolar) c. Cg(MOS) lesser than Cbase(bipolar) d. Cs(MOS) lesser than Cbase(bipolar) 40 / 50 40. N-well is formed by . . . . . . . . a. Diffusion b. Filtering c. Decomposition d. Dispersion 41 / 50 41. Positive photo resists are used more than negative photo resists because . . . . . . . . a. Negative photo resists are less sensitive to light b. Positive photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the negative photo resists c. Positive photo resists are less sensitive to light d. Negative photo resists are more sensitive to light, but their photo lithographic resolution is not as high as that of the positive photo resists 42 / 50 42. Which process produces a circuit which is less prone to latch-up effect? a. BiCMOS b. CMOS c. nMOS d. pMOS 43 / 50 43. Increasing Vsb . . . . . . . . the threshold voltage. a. Decreases b. Increases c. Exponentially increases d. Does not effect 44 / 50 44. Depletion mode MOSFETs are more commonly used as . . . . . . . . a. Switches b. Resistors c. Buffers d. Capacitors 45 / 50 45. In nMOS fabrication, etching is done using . . . . . . . . . a. Hydrochloric acid b. Sulphuric acid c. Plasma d. Sodium chloride 46 / 50 46. What are the advantages of E-beam masks? a. Complex design b. Looser layer c. Small feature size d. Larger feature size 47 / 50 47. Which is used for the interconnection? a. Boron b. Oxygen c. Silicon d. Aluminium 48 / 50 48. The dopants are introduced in the active areas of silicon by using which process? a. Diffusion process b. Chemical Vapour Deposition c. Either Diffusion or Ion Implantation Process d. Ion Implantation process 49 / 50 49. Contact cuts are made in . . . . . . . . . a. Metal layer b. Source c. Drain d. Diffusion layer 50 / 50 50. Surface mobility depends on . . a. Effective drain voltage b. Channel length c. Effective source voltage d. Effective gate voltage Your score is LinkedIn Facebook Twitter VKontakte 0% Restart quiz Exit Anonymous feedback Thank you Send feedback Share this